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Defects in Semiconductors
August 8-13, 2010
Colby-Sawyer College
New London, NH
Chair:
Shengbai Zhang

Vice Chair:
Evan R. Glaser
Application Deadline
Applications are no longer being accepted for this meeting. If you have been instructed to apply by the Conference Chair, please contact your Conference Coordinator for further instructions.

Continuing its tradition of excellence, this Gordon Conference will focus on research at the forefront of the field of defects in semiconductors. The conference will have a strong emphasis on the control of defects during growth and processing, as well as an emphasis on the development of novel defect detection methods and first-principles defect theories. Electronic, magnetic, and optical properties of bulk, thin film, and nanoscale semiconductors will be discussed in detail. In contrast to many conferences, which tend to focus on specific semiconductors, this conference will deal with point and extended defects in a broad range of electronic materials. This approach has proved to be extremely fruitful for advancing fundamental understanding in emerging materials such as wide-band-gap semiconductors, oxides, sp2 carbon based-materials, and photovoltaic/solar cell materials, and in understanding important defect phenomena such as doping bottleneck in nanostructures and the diffusion of defects and impurities. The program consists of about twenty invited talks and a number of contributed poster sessions. The emphasis should be on work which has yet to be published. The large amount of discussion time provides an ideal forum for dealing with topics that are new and/or controversial.

Contributors
SUNDAY
2:00 pm - 9:00 pmArrival and Check-in (Office Closed 6:00 pm - 7:00 pm)
6:00 pmDinner
7:30 pm - 7:40 pmWelcome / Introductory Comments by GRC Site Staff
7:40 pm - 9:30 pmsp2 CARBON BASED-MATERIALS
7:40 pm - 7:50 pm Discussion Leader: Vincent Meunier (Oak Ridge National Lab, USA)
"Introduction"
7:50 pm - 8:20 pm Mauricio Terrones (Universidad Iberoamericana, México)
"Defect Nanoengineering in Graphene-like Materials: New Properties and Applications"
8:20 pm - 8:40 pm Discussion
8:40 pm - 9:10 pm Arkady Krasheninnikov (University of Helsinki, Finland)
"Embedding Transition-metal Atoms in Graphene"
9:10 pm - 9:30 pm Discussion
MONDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:30 amDIAMOND
9:00 am - 9:10 am Discussion Leader: Mary Ellen Zvanut (University of Alabama, USA)
"Introduction"
9:10 am - 9:40 am Ulrika F.S. D'Haenens-Johansson (University of Warwick, UK)
"EPR of Silicon-Related Defects in CVD Diamond"
9:40 am - 10:00 am Discussion
10:00 am Coffee Break / Group Photo
10:30 am - 12:30 pmZINC OXIDE
10:30 am - 10:40 am Discussion Leader: Detlev Hofmann (Universität Gießen, Germany)
"Introduction"
10:40 am - 11:15 am Irina Buyanova (Linkoping University, Sweden)
"Vacancies in As-grown ZnO Single Crystals"
11:15 am - 11:35 am Discussion
11:35 am - 12:10 pm Chul-Hong Park (Pusan National University, South Korea)
"Oxygen Vacancy and Zinc Interstitial Pairs in ZnO"
12:10 pm - 12:30 pm Discussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:30 pm - 9:30 pmIII-V NITRIDES
Discussion Leader: Sukit Limpijumnong (Suranaree University of Technology, Thailand)
7:30 pm - 7:55 pm Christian Wetzel (Rensselaer Polytechnic Institute, USA)
"Defects in Nitride Semiconductors"
7:55 pm - 8:10 pm Discussion
8:10 pm - 8:35 pm Tanya Paskova (Kyma Technologies, USA)
"Defects in GaN Boule Growth, Polar and Non-polar"
8:35 pm - 8:50 pm Discussion
8:50 pm - 9:15 pm Matthias Bickermann (University of Erlangen, Germany)
"Growth Related Defects in Bulk AlN"
9:15 pm - 9:30 pm Discussion
9:30 pm - 11:30 pm Poster Session I
TUESDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:30 amINTERFACE
9:00 am - 9:10 am Discussion Leader: Pat Mooney (Simon Fraser University, Canada)
"Introduction"
9:10 am - 9:40 am Patrick Lenahan (Penn State, USA)
"Interface Traps in Silicon Carbide MOSFETs"
9:40 am - 10:00 am Discussion
10:00 am Coffee Break
10:30 am - 12:30 pmPHOTOVOLTAIC/SOLAR CELL MATERIALS
10:30 am - 10:40 am Discussion Leader: Yanfa Yan (National Renewable Energy Lab, USA)
"Introduction"
10:40 am - 11:15 am Kin Man Yu (Lawrence Berkeley National Lab, USA)
"Crystalline-amorphous-crystalline Phase Transition in GaAsN Alloys"
11:15 am - 11:35 am Discussion
11:35 am - 12:10 pm Tonio Buonassisi (MIT, USA)
"Transition Metal Interactions in Si Solar Cell Materials"
12:10 pm - 12:30 pm Discussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:30 pm - 9:30 pmEXTENDED DEFECTS
7:30 pm - 7:40 pm Discussion Leader: Matt McCluskey (Washington State, USA)
"Introduction"
7:40 pm - 8:15 pm Yoosuf N. Picard (Carnegie Mellon University, USA)
"Electron Channeling Contrast Imaging (ECCI): Comprehensive Analysis of Extended Defects in Semiconducting Materials and Devices"
8:15 pm - 8:35 pm Discussion
8:35 pm - 9:10 pm Sergei Maximenko (Naval Research Lab, USA)
"CL/EBIC-SEM Techniques for Evaluation of Crystallographic Defects in Wide Bandgap Thin films and Nanostructured Materials"
9:10 pm - 9:30 pm Discussion
9:30 pm - 11:30 pm Poster Session II
WEDNESDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:30 amNOVEL DETECTION METHOD
9:00 am - 9:15 am Discussion Leader: Eugene Haller (UC Berkeley, USA)
"Introduction"
9:15 am - 9:40 am Jian V. Li (National Renewable Energy Lab, USA)
"A 2-dimensional Arrhenius Plot Method to Study Complex Defect Activation Processes"
9:40 am - 10:00 am Discussion
10:00 am Coffee Break
10:30 am - 12:30 pmFRONTIER IN FIRST-PRINCIPLES DEFECT THEORIES
10:30 am - 10:40 am Discussion Leader: Chris Van de Walle (UC Santa Barbara, USA)
"Introduction"
10:40 am - 11:15 am Sokrates T. Pantelides (Vanderbilt University, USA)
"Modeling Radiation Damage in SiO2"
11:15 am - 11:35 am Discussion
11:35 am - 12:10 pm Patrick Rinke (UC Santa Barbara, USA)
"Defect Physics without the Band-Gap Problem: Combining DFT and GW"
12:10 pm - 12:30 pm Discussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:00 pm - 7:30 pmBusiness Meeting
(Nominations for the next Vice Chair; Fill out Conference Evaluation Forms; Discuss future Site & Scheduling preferences; Election of the next Vice Chair)
7:30 pm - 9:30 pmSPIN AND DEFECTS
7:30 pm - 7:45 pmDiscussion Leader: Martin Brandt (Walter Schottky Institute, Germany)
"Introduction"
7:45 pm - 8:20 pm Olivier Krebs (CNRS-Laboratoire de Photonique et Nanostructures, France)
"Single Mn Atoms in III-V Quantum Dots"
8:20 pm - 8:40 pm Discussion
8:40 pm - 9:15 pm Philipp Neumann (Universität Stuttgart, Germany)
"Dynamic Polarization of Single Nuclear Spins by Optical Pumping of Nitrogen-Vacancy Color Centers in Diamond at Room Temperature"
9:15 pm - 9:30 pm Discussion
9:30 pm - 11:30 pm Poster Session III
THURSDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:30 amFERROELECTRICS
9:00 am - 9:10 am Discussion Leader: Simon Phillpot (University of Florida, USA)
"Introduction"
9:10 am - 9:40 am R. Ramesh (UC Berkeley, USA)
"Defects in Perovskite Ferroelectric Thin Films"
9:40 am - 10:00 am Discussion
10:00 am Coffee Break
10:30 am - 12:30 pmNANOSTRUCTURES: DEFECTS AND DOPING BOTTLENECK
10:30 am - 10:40 am Discussion Leader: Alexander Efros (Naval Research Lab, USA)
"Introduction"
10:40 am - 11:15 am Daniel R. Gamelin (University of Washington, USA)
"Doping Nanocrystals"
11:15 am - 11:35 am Discussion
11:35 am - 12:10 pm Kiyoshi Kanisawa (NTT, Japan)
"Structure of a Single Hydrogenic Defect in a Semiconductor Quantum Well"
12:10 pm - 12:30 pm Discussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:30 pm - 9:30 pmAFTER BANQUET (KEYNOTE) SESSION
7:30 pm - 7:40 pm Discussion Leader: Shengbai Zhang (Rensselaer Polytechnic Institute)
"Introduction"
7:40 pm - 8:40 pm Ramesh Bhargava (Nanocrystals Technology, Co-Chair of 1st GRC: Point and Line Defects in Semiconductors)
"How Incorporation of a Single Atomic Impurity in Nanocrystal Can Save a Life"
8:40 pm - 9:00 pm Discussion
FRIDAY
7:30 am - 8:30 amBreakfast
9:00 amDeparture
Last Updated: July 22, 2010
 
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