Gordon Research Conferences
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Conference Program
 
Defects in Semiconductors
August 12-17, 2012
University of New England
Biddeford, ME
Chair:
Evan R. Glaser

Vice Chair:
Christian M. Wetzel

Redoubled effort in energy efficiency motivates research in a tremendously broadened variety of semiconductor materials. The prospect of superior performance is weighed against cost and availability and, therefore, control and manageability of defects gain preeminent relevance. We therefore call for a meeting of leading experts from industry, academia, and national laboratories in the well-tested format of a Gordon Research Conference on the topic of defects in bulk and nanostructured semiconductor material systems. The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods. To further the informal exchange of hot topics and yet unpublished results, we limit the program to some twenty invited talks and additional contributed posters with ample discussion time. To protect your IP rights, no recordings will be allowed and no proceedings will be disseminated. We particularly solicit attendance by graduate students, post-docs, and junior scientists in the field. For those who have attended in the past, please note our new New England location.


Contributors

SUNDAY
2:00 pm - 9:00 pmArrival and Check-in (Office Closed 6:00 pm - 7:00 pm)
6:00 pmDinner
7:30 pm - 7:40 pmWelcome / Introductory Comments by GRC Site Staff
7:40 pm - 9:30 pmSpintronics / Quantum Information
7:40 pm - 7:50 pmDiscussion Leader: Michael Thewalt (Simon Fraser University, Canada)
7:50 pm - 8:20 pmBen Murdin (University of Surrey, UK)
"Coherent Manipulation of Hydrogenic 'Rydberg' States for Atomic-Scale Spintronics in Si"
8:20 pm - 8:40 pmDiscussion
8:40 pm - 9:10 pmKazunori Sato (Osaka University, Japan)
"Computational Nano-materials Design and Realization for Semiconductor Spintronics: Control of Defect and Spinodal Nano-Decomposition"
9:10 pm - 9:30 pmDiscussion
MONDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:00 amDiamond
9:00 am - 9:10 amDiscussion Leader: Paul Barclay (University of Calgary, Canada)
9:10 am - 9:40 amBoris Naydenov (University of Ulm, Germany)
"Quantum Control of Single Spins in Diamond"
9:40 am - 10:00 amDiscussion
10:00 amCoffee Break
10:30 am - 12:30 pmPhotovoltaic / Solar Cell Materials
10:30 am - 10:40 amDiscussion Leader: Wladek Walukiewicz (Lawrence Berkeley National Lab, USA)
10:40 am - 11:15 amEric Mazur (Harvard University, USA)
"Towards Increased Efficiency in Photovoltaic Materials via Intermediate States"
11:15 am - 11:35 amDiscussion
11:35 am - 12:10 pmJohn Murphy (University of Oxford, UK)
"Impurity Interactions with Extended Defects in Silicon Photovoltaics"
12:10 pm - 12:30 pmDiscussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:30 pm - 9:30 pmMetal Oxides I
7:30 pm - 7:40 pm Discussion Leader: Tim Veal (University of Liverpool, UK)
7:40 pm - 8:15 pmAnderson Janotti (UC Santa Barbara, USA)
"Unraveling the Puzzling Behavior of Dopants and Defects in TiO2"
8:15 pm - 8:35 pmDiscussion
8:35 pm - 9:10 pmOliver Bierwagen (PDI- Berling, Germany)
"Electron Transport in Semiconducting SnO2 and In2O3 - Doping, Defects, and the Surface"
9:10 pm - 9:30 pmDiscussion
9:30 pm - 11:00 pmPoster Session I
TUESDAY
7:30 am - 8:30 amBreakfast
9:00 am - 11:20 amMetal Oxides II
9:00 am - 9:10 amDiscussion Leader: Steve Durbin (University of Buffalo, USA)
9:10 am - 9:40 amLen Brillson (Ohio State University, USA)
"Spectroscopy of Native Point Defects at ZnO Surfaces and Interfaces"
9:40 am - 10:00 amDiscussion
10:00 amCoffee Break
10:30 am - 11:00 amSandro Koch (TU-Dresden)
"Tetrahedrally Coordinated H in ZnO"
11:00 am - 11:20 amDiscussion
11:20 am - 12:20 pmComplex Oxides
11:20 am - 11:40 amDiscussion Leader: Mike Stavola (Lehigh University, USA)
11:40 am - 12:05 pmMarianne Tarun (Washington State University, USA)
"Nature of Hydrogen-related Defects in Strontium Titanate"
12:05 pm - 12:20 pmDiscussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:30 pm - 8:30 pmPoint Defects in Nitrides
7:30 pm - 7:40 pm Discussion Leader: Bruno Meyer (Universität Gieβen, Germany)
7:40 pm - 8:10 pmN.T. Son (Linkoping University, Sweden)
"Electron Spin Resonance of Deep Centers and Dopants in Nitride Semiconductors"
8:10 pm - 8:30 pmDiscussion
8:30 pm - 9:30 pmExtended Defects in Nitrides
8:30 pm - 8:40 pm Discussion Leader: Rachel Goldman (University of Michigan, USA)
8:40 pm - 9:10 pmMichelle Moram (Imperial College - London, UK)
"Dislocation Motion in Nitride Semiconductors"
9:10 pm - 9:30 pmDiscussion
9:30 pm - 11:00 pmPoster Session II
WEDNESDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:00 amSilicon Carbide
9:00 am - 9:10 amDiscussion Leader: Bill Mitchel (Air Force Research Laboratory, USA)
9:10 am - 9:40 amHidekazu Tsuchida (Central Research Institute of Electric Power Industry (CRIEPI), Nagasaka, Japan)
"Towards Long Minority Carrier Lifetimes in 4H-SiC Epitaxial Layers"
9:40 am - 10:00 amDiscussion
10:00 amGroup Photo / Coffee Break
10:30 am - 12:30 pmGraphitic Materials
10:30 am - 10:40 amDiscussion Leader: Ado Jorio (Federal University of Minas Gerais, Brazil)
10:40 am - 11:15 amThushari Jayasekera (Southern Illinois University, USA)
"Electronic Band Engineering of Epitaxial Graphene by Atomic Intercalation"
11:15 am - 11:35 amDiscussion
11:35 am - 12:10 pmUlrich Starke (Max Planck Institute - Stuttgart, Germany)
"Control of Doping in Epitaxial Graphene"
12:10 pm - 12:30 pmDiscussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:00 pm - 7:30 pmBusiness Meeting
Nominations for the next Vice Chair; Fill out Conference Evaluation Forms; Discuss future Site & Scheduling preferences; Election of the next Vice Chair
7:30 pm - 9:30 pmDoping of Nanostructures
Discussion Leader: Pavle Radovanovic (University of Waterloo, Canada)
7:30 pm - 7:55 pmSteve Erwin (Naval Research Laboratory, USA)
"Pathways to Doping Semiconductor Nanocrystals"
7:55 pm - 8:10 pmDiscussion
8:10 pm - 8:35 pmUri Banin (Hebrew University, Israel)
"Heavily Doped Semiconductor Nanocrystal Quantum Dots"
8:35 pm - 8:50 pmDiscussion
8:50 pm - 9:15 pmDavid Norris (ETH Zurich, Switzerland)
"Electronic Dopants in Semiconductor Nanocrystals"
9:15 pm - 9:30 pmDiscussion
9:30 pm - 11:00 pmPoster Session III
THURSDAY
7:30 am - 8:30 amBreakfast
9:00 am - 10:00 amNew Frontiers in Chalcogenide Semiconductors
9:00 am - 9:10 amDiscussion Leader: Kang Wang (UCLA, USA)
9:10 am - 9:40 amQi-Kun Xue (Tsinghua University, China)
"Control of Defects and Conductivity in Topological Insulators"
9:40 am - 10:00 amDiscussion
10:00 amCoffee Break
10:30 am - 12:30 pmNovel Defect-Sensitive Detection/Imaging Techniques
10:30 am - 10:40 amDiscussion Leader: Filip Tuomisto (Aalto University, Finland)
10:40 am - 11:15 amLincoln Lauhon (Northwestern University, USA)
"Imaging Dopant and Impurity Distributions in Semiconductor Nanowires via Atom Probe Tomography"
11:15 am - 11:35 amDiscussion
11:35 am - 12:10 pmSteve Pennycook (Oak Ridge National Laboratory, USA)
"Imaging of Defects in Semiconductor Nanostructures Using Aberration-corrected STEM"
12:10 pm - 12:30 pmDiscussion
12:30 pmLunch
1:30 pm - 6:00 pmFree Time
6:00 pmDinner
7:30 pm - 9:00 pmAfter Banquet Session
7:30 pm - 7:40 pm Discussion Leader: Evan Glaser (Naval Research Laboratory)
7:40 pm - 8:40 pmMartin Stutzmann (TU Munich, Germany)
"Defect Spectroscopy - Quo Vadis"
8:40 pm - 9:00 pmDiscussion
FRIDAY
7:30 am - 8:30 amBreakfast
9:00 amDeparture

The views, opinions, and/or findings contained in this report are those of the author(s) and should not be construed as an official Department of the Army position, policy, or decision, unless so designated by other documentation.

 
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