Developing the ability to control and manipulate defects in semiconductor materials and devices has been of fundamental importance to the semiconductor industry from its inception. In nanoscale devices the presence of a single defect can have a profound influence on device performance. In many semiconductor device applications, including the solar industry, to achieve optimal device performance defect minimization within the bulk and at interfaces is of paramount importance. To achieve the exquisite control required, detailed attention needs to be given to the appropriate combination of theory, characterization and control. Not all defects are detrimental to device performance and in some cases defects can be used as the active element of a device or material. That is particularly true in the case of emerging quantum devices where single defects with desirable optical and electronic properties are being used to develop quantum computing, quantum metrology and spintronic technologies. The Gordon Research Conference on Defects in Semiconductors will focus on the key issues of defect formation, characterization, control and utilization that need to be addressed for continued development in semiconductor and emerging quantum device technologies.
This Gordon Research Conference on Defects in Semiconductors is held biannually and offers a unique opportunity for scientists and technologists to address key questions and opportunities associated with defects across the full spectrum of semiconductor materials and devices. The off-the-record format of the conference allows an opportunity for full and frank discussion of new discoveries and challenges. The conference blends lecture hall presentation and in-depth discussion with social gatherings to provide an environment in which young scientists and experienced practitioners in the field can actively engage in sharing concerns and advances in semiconductor research. Attendees will benefit from the conference-friendly facilities and relaxed atmosphere of Colby-Sawyer College. The format of the conference and the local environment provide an excellent opportunity to discuss science and to develop networks and new collaborations.
The conference will address theory, characterization, control and utilization of defects in a broad range of semiconductor materials and devices of topical interest. This will include defects in wide band-gap nitride, oxide, and carbide semiconductors and novel two-dimensional materials such as transition metal di-chalcogenides and other graphene analogues. Attention will also focus on emerging materials for photovoltaics including the perovskites. Technological applications range from electronics for power generation, power distribution, and lighting to spintronics and quantum information processing.
The Gordon Research Conference is complemented by a highly successful Gordon Research Seminar (GRS) designed by and for graduate students and post-doctoral fellows. The two-day GRS precedes the GRC, acclimatizing young scientists to the unique style of Gordon Conferences and encouraging them to share and present their ideas to their peers. Attendance at both the GRS and GRC provides young scientists with a unique opportunity to actively engage in this area of research that is of fundamental importance to existing and future developments in semiconductor and quantum technologies.
The conference will consist of nine sessions, on the topics listed below. The conference chair is currently developing their preliminary program, which will include the names of the invited speakers and discussion leaders for each of these sessions. Please check back regularly for updates to this information.
- Developments in Defect Spectroscopy and Metrology
- Color Centers in Wide Band-Gap Semiconductors and 2D Materials for Quantum Applications
- Characteristics of Defects in 2D Materials and Oxide Semiconductors
- Spin Centers: Spectroscopy and Applications
- Defects in Nitride Semiconductors
- Defects in Photovoltaic Materials and Devices, Identification and Control
- Defect Characterization and Control
- High Resolution Imaging and Characterization of Defects
- Keynote Session: Toward Single Defect Imaging in Layered and 3D Materials