Sunday
2:00 pm - 9:00 pm
Arrival and Check-in
6:00 pm - 7:00 pm
Dinner
7:30 pm - 7:40 pm
Introductory Comments by GRC Staff / Welcome and Introduction from the Chairs
7:40 pm - 9:30 pm
Defects in Two-Dimensional Materials and Emerging Systems
7:40 pm - 7:55 pm
Introduction by Discussion Leader
7:55 pm - 8:25 pm
"Defects and Interfaces in Low-Dimensional Materials for Resistive Switching"
8:25 pm - 8:40 pm
Discussion
8:40 pm - 9:10 pm
"Atom-by-Atom Engineering of Defect Levels in Semiconductors"
9:10 pm - 9:25 pm
Discussion
9:25 pm - 9:30 pm
General Discussion
Monday
7:30 am - 8:30 am
Breakfast
9:00 am - 12:30 pm
Quantum Defects for Sensing and Information Technologies
9:00 am - 9:15 am
Introduction by Discussion Leader
9:15 am - 9:55 am
"Scalable Quantum Photonics in Silicon Carbide"
9:55 am - 10:10 am
Discussion
10:10 am - 10:40 am
Coffee Break
10:40 am - 11:20 am
"Spin-Lattice Interactions and Molecular Defects in Solid-State Quantum Systems: From NV Centers in Diamond to Single-Photon Emitters in Nitrides"
11:20 am - 11:35 am
Discussion
11:35 am - 12:15 pm
"Transition Metal Defect Centers in AlN and their Potential for Quantum Applications"
12:15 pm - 12:30 pm
Discussion
12:30 pm - 1:30 pm
Lunch
1:30 pm - 4:00 pm
Free Time
4:00 pm - 6:00 pm
Poster Session
6:00 pm - 7:00 pm
Dinner
7:30 pm - 9:30 pm
Extended Defects and Interfaces in Complex Materials
7:30 pm - 7:45 pm
Introduction by Discussion Leader
7:45 pm - 8:15 pm
"Functional Dislocations"
8:15 pm - 8:30 pm
Discussion
8:30 pm - 9:00 pm
"Dislocations and Carrier Recombination in Semiconductors: Insights from Epitaxial Growth and Characterization"
9:00 pm - 9:15 pm
Discussion
9:15 pm - 9:30 pm
General Discussion
Tuesday
7:30 am - 8:30 am
Breakfast
9:00 am - 12:30 pm
Multiscale Approaches for Characterizing Defects in Devices
9:00 am - 9:15 am
Introduction by Discussion Leader
9:15 am - 10:00 am
"Defects and Disorder in Si/SiGe Quantum Devices: The Good, the bad, and the yet to be Understood"
10:00 am - 10:15 am
Discussion
10:15 am - 10:45 am
Coffee Break
10:45 am - 11:30 am
"Defect Mediated Carrier Recombination in Wide-Band-Gap Semiconductors"
11:30 am - 11:45 am
Discussion
11:45 am - 11:55 am
Short Talk Selected from Poster Abstracts
11:55 am - 12:00 pm
Discussion
12:00 pm - 12:10 pm
Short Talk Selected from Poster Abstracts
12:10 pm - 12:15 pm
Discussion
12:15 pm - 12:25 pm
Short Talk Selected from Poster Abstracts
12:25 pm - 12:30 pm
Discussion
12:30 pm - 1:30 pm
Lunch
1:30 pm - 4:00 pm
Free Time
4:00 pm - 6:00 pm
Poster Session
6:00 pm - 7:00 pm
Dinner
7:30 pm - 9:30 pm
Defect-Mediated Recombination and Transport Processes
7:30 pm - 7:45 pm
Introduction by Discussion Leader
7:45 pm - 8:15 pm
"Trap-Assisted Nonradiative Recombinations: First-Principles Calculations Formalisms and Case Studies"
8:15 pm - 8:30 pm
Discussion
8:30 pm - 9:00 pm
"Deep Levels and DX-Center Phenomena in AlN are Enabling for Device Functionality"
9:00 pm - 9:15 pm
Discussion
9:15 pm - 9:30 pm
General Discussion
Wednesday
7:30 am - 8:30 am
Breakfast
9:00 am - 12:30 pm
Defects in Wide and Ultrawide-Bandgap Semiconductors
9:00 am - 9:15 am
Introduction by Discussion Leader
9:15 am - 10:00 am
"Characterization of Shallow and Deep Level Defects in β-(Alx Ga1-x )2 O3 Bulk Crystals: The Dependency of Defect States on Al Concentration"
10:00 am - 10:15 am
Discussion
10:15 am - 10:45 am
Coffee Break
10:45 am - 11:30 am
"Investigating Defects in High Al-Content AlN Alloys"
11:30 am - 11:45 am
Discussion
11:45 am - 11:55 am
Short Talk Selected from Poster Abstracts
11:55 am - 12:00 pm
Discussion
12:00 pm - 12:10 pm
Short Talk Selected from Poster Abstracts
12:10 pm - 12:15 pm
Discussion
12:15 pm - 12:25 pm
Short Talk Selected from Poster Abstracts
12:25 pm - 12:30 pm
Discussion
12:30 pm - 1:30 pm
Lunch
1:30 pm - 4:00 pm
Free Time
4:00 pm - 6:00 pm
Poster Session
6:00 pm - 7:00 pm
Dinner
7:30 pm - 9:30 pm
7:30 pm - 7:50 pm
Introduction by Discussion Leader
7:50 pm - 8:05 pm
Short Talk Selected from Poster Abstracts
8:05 pm - 8:10 pm
Discussion
8:10 pm - 9:10 pm
"Imaging Defects at the Atomic Scale with 3D Information by Electron Ptychography"
9:10 pm - 9:25 pm
Discussion
9:25 pm - 9:30 pm
General Discussion
Thursday
7:30 am - 8:30 am
Breakfast
8:30 am - 9:00 am
Business Meeting
Nominations for the Next Vice Chair(s); Complete the GRC Evaluation Forms; Election of the Next Vice Chair(s)
9:00 am - 12:30 pm
Data-Driven Discovery and Characterization of Defects
9:00 am - 9:15 am
Introduction by Discussion Leader
9:15 am - 9:55 am
"Computational Strategies for Accelerated Modelling of Defects in Solids"
9:55 am - 10:10 am
Discussion
10:10 am - 10:40 am
Coffee Break
10:40 am - 11:20 am
"Machine-Learned Potentials for Finite-Temperature Defect Properties: Charge Transition Levels and Optical Line Shapes from Molecular Dynamics"
11:20 am - 11:35 am
Discussion
11:35 am - 12:15 pm
"Automated, Multimodal Measurements of Semiconductor Defects"
12:15 pm - 12:30 pm
Discussion
12:30 pm - 1:30 pm
Lunch
1:30 pm - 4:00 pm
Free Time
4:00 pm - 6:00 pm
Poster Session
6:00 pm - 7:00 pm
Dinner
7:30 pm - 9:30 pm
Defects at Complex Interfaces
7:30 pm - 7:45 pm
Introduction by Discussion Leader
7:45 pm - 8:15 pm
"Controlling and Utilizing Defect Segregation at Complex Interfaces and Surfaces"
8:15 pm - 8:30 pm
Discussion
8:30 pm - 9:00 pm
"Real-Time Observations of Atomic Migration and Defect Evolution with Electron Microscopy"
9:00 pm - 9:15 pm
Discussion
9:15 pm - 9:30 pm
General Discussion
Friday
7:30 am - 8:30 am
Breakfast
9:00 am
Departure