Insight, Characterization, and Control of Defects in Advanced Materials

Semiconductor devices, from the earliest transistors to the projected spin-ristors, depend critically on defects. Methods to controllably add and minimize defects are essential for the success of optical, electronic, and spintronic based technologies, therefore, developing a detailed understanding of their fundamental physics and chemistry is mandatory for the creation of new game-changing devices.

This Gordon Research Conference is a unique biannual opportunity to discuss defects across all semiconductor materials and applications in an off-the-record format. By blending lecture hall discourse and social gatherings, young scientists and experienced professionals will learn the latest concerns and advances in semiconductors while enjoying the conference-friendly facilities and relaxing atmosphere of Colby-Sawyer College. The meeting will address the theoretical basics as well as the characterization and utility of point, line and extended defects in a broad range of topical materials. This includes defects in novel two-dimensional materials such as transition metal dichalcogenides and other graphene analogues along with semiconductors relevant to quantum emission processes. We also expect sessions to address wide bandgap nitride, oxide, and carbide semiconductors with evolving applications in electronics for power generation and lighting.

In addition to the GRC, graduate and post-doctoral students are encouraged to attend the pre-conference Gordon Research Seminar (GRS) designed by their peers. The two-day GRS acclimates young scientists to the unique style of Gordon Conferences and encourages them to share and present their ideas to their peers.